? 2013 ixys corporation, all rights reserved IXYK140N90C3 ixyx140n90c3 v ces = 900v i c110 = 140a v ce(sat) 2.7v t fi(typ) = 105ns ds100450b(02/13) high-speed igbts for 20-50 khz switching features z optimized for low switching losses z square rbsoa z international standard packages z positive thermal coefficient of vce(sat) z avalanche rated z high current handling capability advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 950 v v ge(th) i c = 250 a, v ce = v ge 3.5 5.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 150 c 1.25 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.15 2.70 v t j = 150 c 2.85 v symbol test conditions maximum ratings v ces t j = 25c to 175c 900 v v cgr t j = 25c to 175c, r ge = 1m 900 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 310 a i lrms terminal current limit 160 a i c110 t c = 110c 140 a i cm t c = 25c, 1ms 840 a i a t c = 25c 70 a e as t c = 25c 1 j ssoa v ge = 15v, t vj = 150c, r g = 1 i cm = 280 a (rbsoa) clamped inductive load @v ce v ces p c t c = 25c 1630 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g xpt tm 900v igbts genx3 tm g = gate e = emitter c = collector tab = collector to-264 (ixyk) e g c plus247 (ixyx) g tab tab e c g
ixys reserves the right to change limits, test conditions, and dimensions. IXYK140N90C3 ixyx140n90c3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 30 52 s c ie s 9830 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 570 pf c res 185 pf q g(on) 330 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 82 nc q gc 128 nc t d(on) 40 ns t ri 86 ns e on 4.3 mj t d(off) 145 ns t fi 105 ns e of f 4.0 6.5 mj t d(on) 37 ns t ri 85 ns e on 6.5 mj t d(off) 175 ns t fi 125 ns e off 5.0 mj r thjc 0.092 c/w r thcs 0.15 c/w inductive load, t j = 25c i c = 100a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 note 2 inductive load, t j = 150c i c = 100a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 note 2 to-264 outline terminals: 1 = gate 2,4 = collector 3 = emitter terminals: 1 - gate 2 - collector 3 - emitter plus247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190
? 2013 ixys corporation, all rights reserved IXYK140N90C3 ixyx140n90c3 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 v ce - volts i c - amperes v ge = 15v 12v 8v 9v 10v 6v 11v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 024681012141618 v ce - volts i c - amperes v ge = 15v 12v 8v 10v 9v 7v 11v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 280 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 15v 12v 11v 9v 8v 7v 10v 6v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 140a i c = 70a i c = 280a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 280 a t j = 25oc 140 a 70 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYK140N90C3 ixyx140n90c3 fig. 7. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc, 25oc, 150oc fig. 10. reverse-bias safe operating area 0 50 100 150 200 250 300 100 200 300 400 500 600 700 800 900 v ce - volts i c - amperes t j = 150oc r g = 1 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 q g - nanocoulombs v ge - volts v ce = 450v i c = 140a i g = 10ma fig. 9. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYK140N90C3 ixyx140n90c3 fig. 12. inductive switching energy loss vs. gate resistance 1 2 3 4 5 6 7 8 12345678910 r g - ohms e off - millijoules 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 450v i c = 50a i c = 100a fig. 15. inductive turn-off switching times vs. gate resistance 60 80 100 120 140 160 180 200 220 240 260 12345678910 r g - ohms t f i - nanoseconds 140 160 180 200 220 240 260 280 300 320 340 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 450v i c = 100a i c = 50a fig. 13. inductive switching energy loss vs. collector current 1 2 3 4 5 6 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 0 2 4 6 8 10 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 450v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 450v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. collector current 50 75 100 125 150 175 200 225 250 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanoseconds 100 120 140 160 180 200 220 240 260 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 450v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 200 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 120 140 160 180 200 220 240 260 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 450v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXYK140N90C3 ixyx140n90c3 ixys ref: ixy_140n90c3(91)03-26-12-a fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanoseconds 32 34 36 38 40 42 44 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 450v t j = 25oc, 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 24 28 32 36 40 44 48 52 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 450v i c = 100a i c = 50a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 12345678910 r g - ohms t r i - nanoseconds 16 24 32 40 48 56 64 72 80 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 450v i c = 50a i c = 100a
|
